TMDs, HRM, new entrants in the last ten years, have developed as phenomena of great significance in the realm of 2D Semiconductors. They have proven to be major force in breaking all the barriers of silicon-based technologies as possible with a dynamic superiority. They are the new flavor of innovation in the design of transistors and their function, with features such as atomic-thin channel transistors and monolithic 3D integration, all leading the world into a brand-new phase of information technology.
Definition
2D semiconductors are extremely thin, often just one or a few atoms thick. They exhibit high electrical conductivity and exceptional mechanical strength. Additionally, 2D semiconductor are highly flexible and optically transparent. These materials possess excellent thermal conductivity and semiconducting properties, with the added benefit of tunable bandgaps. Their chemical stability ensures reliability and durability in various applications.
What is the process of making 2D semiconductors?
There are several techniques for the synthesis of 2D semiconductors. Researchers widely use chemical vapor deposition (CVD) and metal-organic chemical vapor deposition (MOCVD) techniques. For produce high-quality 2D materials on a wafer scale. These techniques create conditions that allow precise control over the growth of 2D materials with desirable properties, which is crucial for their future integration into electronic and optoelectronic devices. While current processes are sufficiently clear, industries must introduce new machines and innovative designs to enable industry-scale production.
Main Materials
Graphene: Graphene, consisting of single sheets of carbon atoms, has high electron mobility and high thermal conductivity. However, the main issue concerning graphene is that it does not have a band gap, and that is particularly problematic with regard to digital electronics, because it means it cannot switch off field-effect transistors (FETs).
Hexagonal boron nitride: Monolayer hexagonal boron nitride (h-BN) is an insulator with a very high energy gap (5.97 eV). However, it can also behave as a semiconductor whereby conducting better because of its zigzag sharp edges and vacancies. h-BN is usually used in a substrate and barrier due to its insulating property. h-BN is also an excellent thermal conductor.
Other Materials
Dichalcogenides of transition metals: Monolayers or two-dimensional materials based on MX2, where M designates transition metal from groups IV, V and VI, and X denotes chalcogen such as S, Se, or Te, can be classified as transition-metal dichalcogenide (TMD or TMDC). Examples of TMDCs include MoS2, MoSe2, MoTe2, WS2 and WSe2. While TMDC has a layered structure of a plane of metal atoms sandwiched between two planes of chalcogen atoms. The atom layers are strongly bonded in panel and interlayers are weakly bonded. Hence very easily exfoliated to atomically thin layers using various techniques. TMDCs have indeed showed truly deceiving optical and electrical properties according to the different layers containing. Applying several methods of exfoliation, the indirect bandgap of many of the TMDCs is converted into a direct bandgap, which broadened its application in nanoelectronics and optoelectronics and, eventually, quantum computation.
The future of IT revolves around 2D semiconductors. These materials have some unique properties, which can affect breakthroughs in device performance and system integration. Hence keeping industries on the loop about these new advancements to stay competitive. For instance, graphene is incorporated into heat spreader films for heating and thermal management solutions as well as in cell phones.
